Product Details (This product is current)
Monday, March 28, 2016
Edited:
Monday, March 28, 2016
Product Ref No: 129
Order No/Series: n/a
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Products by this Supplier
» Legacy RF Power Transistors
» Mircowave Diodes
» VIMOS RF Power Transistors
» View all above...
VIMOS RF Power Transistors(and Pallets)
Link: adsemi.com/vimostm.html
VIMOSTM vs. LDMOS/GaN
Link: adsemi.com/vimostm.html
What is VIMOSTM?
VIMOSTM is a High Power RF Transistor technology designed specifically for pulsed amplifiers. VIMOSTM devices provide excellent RF performance. In addition, they are extremely rugged, capable of simultaneously withstanding overdrive, overvoltage and 20:1 VSWR. ASI offer a high quality, superior RF device at a very competitive price. Let them prove it. Analyze the data and test their transistors.
VIMOSTM vs. LDMOS/GaN
VIMOSTM is a silicon based technology built upon decades of semiconductor engineering. GaN is in its infancy. The devices are fragile with regards to ruggedness, require additional power supply complexity, and are cost prohibitive.
VIMOSTM technology is specifically designed for pulsed, high power RF amplifiers. LDMOS, on the other hand, was designed for wireless base stations and only subsequently adopted for these types of applications. VIMOSTM devices use the same package as their LDMOS counterparts creating a more rugged amplifier and reducing dependency, exposure and risk to sole source LDMOS.
VIMOSTM can improve the robustness of your amplifier, reduce field failures, significantly reducing the size and weight of your product and increasing performance, all at a competitive cost.
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